MnBi₄Te₇

MnBi₄Te₇ Single Crystal – Tunable Magnetic Topological Insulator
Layered compound formed by alternating MnBi₂Te₄ and Bi₂Te₃ units. Exhibits antiferromagnetic order (Tₙ ≈ 13 K) and strong anomalous Hall effect, ideal for exploring axion and quantum anomalous Hall states.
Characterized by XRD, EDS, and transport studies, confirming high structural and compositional purity.

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MnBi₄Te₇ – Layered Magnetic Topological Insulator

Chemical Formula: MnBi₄Te₇
Crystal Structure: Rhombohedral (space group R-3m)
Purity: ≥ 99.999% (metals basis)
Availability: Cleaved single crystal plates and oriented slabs
For purchase or collaboration inquiries: contact@xtalsphere.com


Overview

MnBi₄Te₇ is a natural heterostructural derivative of MnBi₂Te₄ and Bi₂Te₃ — consisting of alternating magnetic septuple layers (MnBi₂Te₄) and nonmagnetic quintuple layers (Bi₂Te₃).
This unique stacking sequence enables tunable interlayer magnetic coupling and band topology, bridging antiferromagnetic and nonmagnetic topological phases within a single material.

As a result, MnBi₄Te₇ has become a central system for studying magnetically tunable topological insulators, axion insulators, and quantum anomalous Hall (QAH) effects under reduced dimensionality.


Synthesis & Crystal Growth

Xtalsphere synthesizes high-quality MnBi₄Te₇ single crystals using the Bridgman–Stockbarger and flux-growth methods under ultra-high-purity argon.
The crystals are grown from stoichiometric mixtures of Mn, Bi, and Te (≥99.999%) in sealed evacuated quartz ampoules, followed by slow cooling (0.5–1 °C/h).
The resulting crystals exhibit mirror-smooth cleaved surfaces, perfect for ARPES, STM, and transport studies.


Characterization

  • X-ray Diffraction (XRD): Confirms rhombohedral layered structure with alternating 7–5 layer stacking sequence.

  • EDS & SEM: Verify homogeneous stoichiometry Mn:Bi:Te ≈ 1:4:7 with no detectable secondary phases.

  • Raman Spectroscopy: Shows characteristic peaks from both Bi₂Te₃-like and MnBi₂Te₄-like vibrations.

  • Laue Diffraction: Confirms single-domain orientation suitable for anisotropic transport measurements.


Transport & Magnetic Properties

  • Magnetic Ordering Temperature (Tₙ): ~13 K

  • Resistivity (ρ–T): Semiconducting with a sharp magnetic transition at Tₙ.

  • Hall Effect: Displays pronounced anomalous Hall response, indicating Berry curvature–driven transport.

  • Magnetoresistance: Spin-flop transitions observed under applied field.

  • Magnetic Structure: Layered antiferromagnetism with weak interlayer coupling between Mn layers separated by Bi₂Te₃ quintuple layers.

All transport and magnetic measurements are validated using PPMS and SQUID-VSM.


Purity & Quality Assurance

Xtalsphere ensures research-grade crystal quality through:

  • Ultra-high-purity precursors

  • Phase verification via powder/single-crystal XRD

  • No Bi₂Te₃ or MnTe impurity phases

  • Batch-certified composition and resistivity data provided with each order


Applications

  • Magnetic topological insulator and axion insulator studies

  • Quantum anomalous Hall effect research

  • Spintronics and magnetic proximity effects

  • Thin-film and heterostructure device platforms


Contact

Send us a mail to get price quote contact@xtalsphere.com

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