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MnBi₂Te₄ Single Crystal – Magnetic Topological Insulator
High-purity MnBi₂Te₄ crystals grown via flux/Bridgman method. Exhibits antiferromagnetic order (Tₙ ≈ 25 K) and topological surface states, enabling studies on QAHE and axion insulation.
Characterized by XRD, EDS, and Hall transport, confirming high crystallinity and defect-free stoichiometry.
Chemical Formula: MnBi₂Te₄
Crystal Structure: Rhombohedral (space group R-3m)
Purity: ≥ 99.999% (metals basis)
Availability: Cleaved single crystal plates and oriented slabs
For purchase or collaboration inquiries: contact@xtalsphere.com
MnBi₂Te₄ is a layered van der Waals antiferromagnet and the first experimentally confirmed intrinsic magnetic topological insulator (MTI).
It naturally combines magnetism and topological band structure, leading to exotic quantum phenomena such as the quantum anomalous Hall effect (QAHE) and axion insulating states.
Each MnBi₂Te₄ layer consists of septuple atomic sheets (Te–Bi–Te–Mn–Te–Bi–Te), stacked via weak van der Waals interactions — enabling easy exfoliation for 2D studies.
This makes MnBi₂Te₄ an ideal model system for exploring magnetic topological phases, spintronic devices, and quantum Hall physics.
Xtalsphere synthesizes high-quality MnBi₂Te₄ single crystals using a modified Bridgman and flux method, starting from ultra-high-purity Mn, Bi, and Te (≥99.999%).
Growth is performed in sealed evacuated quartz ampoules under a precise temperature gradient, followed by slow cooling to ensure stoichiometric precision and defect minimization.
The resulting crystals exhibit mirror-like cleavage planes, ideal for ARPES, STM, and magnetotransport studies.
Powder & Single-Crystal XRD: Confirms phase purity and layered rhombohedral structure.
EDS & SEM: Reveal homogenous composition and correct Mn:Bi:Te = 1:2:4 stoichiometry.
Raman Spectroscopy: Displays characteristic A₁g and E₉ vibrational modes of layered MTIs.
Laue Diffraction: Ensures crystallographic orientation for magneto-transport analysis.
Antiferromagnetic transition (Tₙ): ~25 K
Resistivity (ρ–T): Semiconducting with a magnetic anomaly at Tₙ.
Hall Effect: Strong anomalous Hall response indicating Berry curvature–driven transport.
Magnetoresistance: Distinct spin-flop transition under external magnetic field.
Magnetization (M–H): Shows layered AFM order with slight interlayer coupling.
All measurements verified via PPMS and SQUID-VSM for accuracy.
Xtalsphere guarantees research-grade MnBi₂Te₄ crystals through:
High-purity precursors and sealed growth conditions
Rigorous EDS and XRD phase verification
No detectable secondary phases such as Bi₂Te₃ or MnTe
Batch-wise characterization and certification for every order
Quantum anomalous Hall and axion insulator studies
2D magnetism and spintronic devices
Topological transport and Berry curvature research
Thin-film heterostructure growth and magnetic proximity effect investigations
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